IRG7PH42UD2PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Base Part Number :

IRG7PH42

Power - Max :

321W

JESD-609 Code :

e3

Qualification Status :

Not Qualified

Mount :

Through Hole

Fall Time-Max (tf) :

85ns

Collector Emitter Voltage (VCEO) :

2.02V

Number of Pins :

3

Transistor Element Material :

SILICON

Gate-Emitter Thr Voltage-Max :

6V

Max Power Dissipation :

321W

Voltage - Collector Emitter Breakdown (Max) :

1200V

RoHS Status :

RoHS Compliant

ECCN Code :

EAR99

Polarity/Channel Type :

N-Channel

Test Condition :

600V, 30A, 10 Ω, 15V

IGBT Type :

Trench

Switching Energy :

1.32mJ (off)

Mounting Type :

Through Hole

Collector Emitter Breakdown Voltage :

1.2kV

Current - Collector Pulsed (Icm) :

90A

Transistor Application :

POWER CONTROL

Case Connection :

COLLECTOR

Turn Off Time-Nom (toff) :

470 ns

Terminal Finish :

MATTE TIN OVER NICKEL

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce(on) (Max) @ Vge, Ic :

2.02V @ 15V, 30A

Number of Terminations :

3

Published :

2009

Element Configuration :

Single

Package / Case :

TO-247-3

Operating Temperature :

-55°C~150°C TJ

Gate Charge :

234nC

Time@Peak Reflow Temperature-Max (s) :

30

Input Type :

Standard

Peak Reflow Temperature (Cel) :

250

Max Collector Current :

60A

Number of Elements :

1

Td (on/off) @ 25°C :

-/233ns

Packaging :

Tube

JEDEC-95 Code :

TO-247AC