IRG7PH42UD2-EP

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Type :

Standard

Element Configuration :

Single

Packaging :

Tube

Collector Emitter Voltage (VCEO) :

2.02V

Transistor Application :

POWER CONTROL

JESD-609 Code :

e3

RoHS Status :

RoHS Compliant

Polarity/Channel Type :

N-Channel

Case Connection :

COLLECTOR

Published :

2014

JEDEC-95 Code :

TO-247AD

Power - Max :

321W

Vce(on) (Max) @ Vge, Ic :

2.02V @ 15V, 30A

Gate Charge :

234nC

Current - Collector Pulsed (Icm) :

90A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Turn Off Time-Nom (toff) :

470 ns

Qualification Status :

Not Qualified

Mount :

Through Hole

Package / Case :

TO-247-3

Collector Emitter Breakdown Voltage :

1.2kV

Switching Energy :

1.32mJ (off)

Max Power Dissipation :

321W

ECCN Code :

EAR99

Test Condition :

600V, 30A, 10 Ω, 15V

Number of Terminations :

3

Mounting Type :

Through Hole

Voltage - Collector Emitter Breakdown (Max) :

1200V

Number of Elements :

1

Transistor Element Material :

SILICON

Td (on/off) @ 25°C :

-/233ns

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Base Part Number :

IRG7PH42

JESD-30 Code :

R-PSFM-T3

Max Collector Current :

60A

IGBT Type :

Trench