IRG7PH42U-EP
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- Mfr.Part #
- IRG7PH42U-EP
- Manufacturer
- International Rectifier
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT
- Stock
- 43
- In Stock ：
- 43
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - IGBTs - Single
- Collector Emitter Saturation Voltage :
- 2V
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Turn-Off Delay Time :
- 229 ns
- Input Type :
- Standard
- Mount :
- Through Hole
- Rise Time-Max :
- 41ns
- Radiation Hardening :
- No
- Factory Lead Time :
- 14 Weeks
- Base Part Number :
- IRG7PH42
- Reverse Recovery Time :
- 153 ns
- Mounting Type :
- Through Hole
- Gate-Emitter Thr Voltage-Max :
- 6V
- Collector Emitter Voltage (VCEO) :
- 2V
- Test Condition :
- 600V, 30A, 10 Ω, 15V
- Turn On Delay Time :
- 25 ns
- Published :
- 2004
- Height :
- 20.7mm
- Element Configuration :
- Single
- Length :
- 15.87mm
- Polarity/Channel Type :
- N-Channel
- RoHS Status :
- RoHS Compliant
- IGBT Type :
- Trench
- Td (on/off) @ 25°C :
- 25ns/229ns
- Power Dissipation :
- 385W
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 385W
- Number of Pins :
- 3
- Vce(on) (Max) @ Vge, Ic :
- 2V @ 15V, 30A
- Gate Charge :
- 157nC
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Switching Energy :
- 2.11mJ (on), 1.18mJ (off)
- Collector Emitter Breakdown Voltage :
- 1.2kV
- Packaging :
- Tube
- Operating Temperature :
- -55°C~175°C TJ
- Fall Time-Max (tf) :
- 86ns
- Package / Case :
- TO-247-3
- Width :
- 5.3086mm
- Max Collector Current :
- 90A
- Datasheets
- IRG7PH42U-EP
IRG7PH42U-EP datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG7PH42U-EP Description
IRG7PH42U-EP is a 1200v insulated gate bipolar transistor. The transistor IRG7PH42U-EP provides high efficiency in a wide range of applications, and excellent current sharing in parallel operation. The Infineon IRG7PH42U-EP can be applied in UPS, welding, solar inverter, and induction heating applications due to the following features. It is suitable for a wide range of switching frequencies due to low Vce(ON) and low switching losses.
IRG7PH42U-EP Features
Low VCE (ON) trench IGBT technology
Low switching losses
Maximum junction temperature 175 °C
Square RBSOA
100% of the parts tested for ILM
Positive VCE (ON) temperature coefficient
Tight parameter distribution
Lead -Free
IRG7PH42U-EP Applications
U.P.S
Welding
Solar inverter
Induction heating
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