IRG7PH35UDPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Package / Case :

TO-247-3

Case Connection :

COLLECTOR

Width :

5.31mm

Lead Free :

Lead Free

Max Collector Current :

50A

Turn On Time :

45 ns

Height :

20.7mm

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Test Condition :

600V, 20A, 10 Ω, 15V

Reverse Recovery Time :

105 ns

Number of Terminations :

3

Length :

15.87mm

Number of Pins :

3

Turn Off Time-Nom (toff) :

400 ns

Gate Charge :

85nC

Polarity/Channel Type :

N-Channel

Td (on/off) @ 25°C :

30ns/160ns

Turn On Delay Time :

30 ns

Collector Emitter Voltage (VCEO) :

2.2V

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Mount :

Through Hole

Voltage - Collector Emitter Breakdown (Max) :

1200V

Radiation Hardening :

No

JEDEC-95 Code :

TO-247AC

Factory Lead Time :

16 Weeks

Collector Emitter Saturation Voltage :

1.9V

RoHS Status :

ROHS3 Compliant

Transistor Application :

POWER CONTROL

Gate-Emitter Thr Voltage-Max :

6V

Max Power Dissipation :

180W

Number of Elements :

1

IGBT Type :

Trench

Input Type :

Standard

Switching Energy :

1.06mJ (on), 620μJ (off)

Collector Emitter Breakdown Voltage :

1.2kV

Vce(on) (Max) @ Vge, Ic :

2.2V @ 15V, 20A

Current - Collector Pulsed (Icm) :

60A

Element Configuration :

Single

Published :

2010

Power Dissipation :

180W

Turn-Off Delay Time :

160 ns

REACH SVHC :

No SVHC