IRG7PH35UD1PBF
- Mfr.Part #
- IRG7PH35UD1PBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT W/ULTRA-LOW VF DIODE FOR IN
- Stock
- 6,810
- In Stock :
- 6,810
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - IGBTs - Single
- Package / Case :
- TO-247-3
- Terminal Position :
- Single
- Polarity/Channel Type :
- N-Channel
- IGBT Type :
- Trench
- Published :
- 2010
- Number of Elements :
- 1
- Vce(on) (Max) @ Vge, Ic :
- 2.2V @ 15V, 20A
- Reach Compliance Code :
- Compliant
- Td (on/off) @ 25°C :
- -/160ns
- JESD-30 Code :
- R-PSFM-T3
- Turn Off Time-Nom (toff) :
- 400 ns
- Current - Collector Pulsed (Icm) :
- 150A
- Gate-Emitter Voltage-Max :
- 30V
- Surface Mount :
- No
- Test Condition :
- 600V, 20A, 10 Ω, 15V
- Transistor Element Material :
- SILICON
- Qualification Status :
- Not Qualified
- Fall Time-Max (tf) :
- 105ns
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Mounting Type :
- Through Hole
- Input Type :
- Standard
- Operating Temperature :
- -55°C~150°C TJ
- Power - Max :
- 179W
- Switching Energy :
- 620μJ (off)
- Power Dissipation-Max (Abs) :
- 179W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate-Emitter Thr Voltage-Max :
- 6V
- Case Connection :
- COLLECTOR
- Number of Terminations :
- 3
- JEDEC-95 Code :
- TO-247AC
- Gate Charge :
- 85nC
- Packaging :
- Tube
- ECCN Code :
- EAR99
- Base Part Number :
- IRG7PH35
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- RoHS Status :
- RoHS Compliant
- Current - Collector (Ic) (Max) :
- 50A
- Transistor Application :
- POWER CONTROL
- Datasheets
- IRG7PH35UD1PBF

IRG7PH35UD1PBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG7PH35UD1PBF IGBT Description
The IRG7PH35UD1PBF IGBT is a 1200 V ultra-fast IGBT with soft-recovery diodes. Its maximum operating temperature is 15°C and is suitable for a wide range of switching frequencies thanks to its low Collector-Emitter voltage and low switching losses. It has excellent current sharing in parallel operation.
IRG7PH35UD1PBF IGBT Features
Square RBSOA
100% of the parts tested for ILM
Tight parameter distribution
Positive VCE(on) temperature coefficient
Low switching losses
Low VCE(on) trench IGBT technology
Ultra-fast soft recovery co-pak diode
Lead-Free
IRG7PH35UD1PBF IGBT Applications
Solar Inverter
Industry Applications
Induction Heating
Welding
U.P.S.
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