IRG7PH35UD1-EP

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Package / Case :

TO-247-3

Case Connection :

COLLECTOR

Number of Terminations :

3

Gate-Emitter Thr Voltage-Max :

6V

Gate Charge :

130nC

RoHS Status :

RoHS Compliant

Max Power Dissipation :

179W

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

50A

Time@Peak Reflow Temperature-Max (s) :

30

Published :

2012

JESD-609 Code :

e3

Terminal Finish :

MATTE TIN OVER NICKEL

JEDEC-95 Code :

TO-247AD

Peak Reflow Temperature (Cel) :

250

Vce(on) (Max) @ Vge, Ic :

2.2V @ 15V, 20A

Td (on/off) @ 25°C :

-/160ns

Power - Max :

179W

Number of Elements :

1

Element Configuration :

Single

REACH SVHC :

No SVHC

Number of Pins :

3

Current - Collector Pulsed (Icm) :

150A

Turn Off Time-Nom (toff) :

400 ns

Input Type :

Standard

Mount :

Through Hole

IGBT Type :

Trench

Test Condition :

600V, 20A, 10 Ω, 15V

Transistor Application :

POWER CONTROL

Collector Emitter Breakdown Voltage :

1.2kV

Base Part Number :

IRG7PH35

Operating Temperature :

-55°C~150°C TJ

Voltage - Collector Emitter Breakdown (Max) :

1200V

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Fall Time-Max (tf) :

105ns

Switching Energy :

620μJ (off)

Transistor Element Material :

SILICON

Polarity/Channel Type :

N-Channel

Packaging :

Tube

Collector Emitter Voltage (VCEO) :

2.2V

Collector Emitter Saturation Voltage :

1.2kV