IRG7PH35UD1-EP

Manufacturer :

International Rectifier

Product Category :

Transistors - IGBTs - Single

Qualification Status :

Not Qualified

IGBT Type :

Trench

Collector Emitter Breakdown Voltage :

1.2kV

Mounting Type :

Through Hole

JESD-609 Code :

e3

Packaging :

Tube

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

RoHS Compliant

Max Collector Current :

50A

Voltage - Collector Emitter Breakdown (Max) :

1200V

Base Part Number :

IRG7PH35

Published :

2012

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

MATTE TIN OVER NICKEL

Input Type :

Standard

Switching Energy :

620μJ (off)

Gate-Emitter Thr Voltage-Max :

6V

Collector Emitter Voltage (VCEO) :

2.2V

Case Connection :

COLLECTOR

REACH SVHC :

No SVHC

Turn Off Time-Nom (toff) :

400 ns

Number of Elements :

1

Number of Pins :

3

Gate Charge :

130nC

Test Condition :

600V, 20A, 10 Ω, 15V

Vce(on) (Max) @ Vge, Ic :

2.2V @ 15V, 20A

ECCN Code :

EAR99

Collector Emitter Saturation Voltage :

1.2kV

Time@Peak Reflow Temperature-Max (s) :

30

JEDEC-95 Code :

TO-247AD

Number of Terminations :

3

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

250

Package / Case :

TO-247-3

Td (on/off) @ 25°C :

-/160ns

Transistor Application :

POWER CONTROL

Max Power Dissipation :

179W

Fall Time-Max (tf) :

105ns

Polarity/Channel Type :

N-Channel

Current - Collector Pulsed (Icm) :

150A

Power - Max :

179W

Mount :

Through Hole