IRG7PH35UD-EP

Manufacturer :

International Rectifier

Product Category :

Transistors - IGBTs - Single

Base Part Number :

IRG7PH35

Transistor Application :

POWER CONTROL

Turn Off Time-Nom (toff) :

400 ns

Vce(on) (Max) @ Vge, Ic :

2.2V @ 15V, 20A

Test Condition :

600V, 20A, 10 Ω, 15V

Collector Emitter Voltage (VCEO) :

2.2V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

N-Channel

Published :

2010

Package / Case :

TO-247-3

Collector Emitter Saturation Voltage :

1.9V

Case Connection :

COLLECTOR

Max Collector Current :

50A

Gate-Emitter Thr Voltage-Max :

6V

Collector Emitter Breakdown Voltage :

1.2kV

Gate Charge :

85nC

Current - Collector Pulsed (Icm) :

60A

Td (on/off) @ 25°C :

30ns/160ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

TO-247AD

Reverse Recovery Time :

105 ns

Input Type :

Standard

REACH SVHC :

No SVHC

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Voltage - Collector Emitter Breakdown (Max) :

1200V

Max Power Dissipation :

180W

ECCN Code :

EAR99

Number of Terminations :

3

Number of Elements :

1

Number of Pins :

3

Factory Lead Time :

16 Weeks

Transistor Element Material :

SILICON

Power - Max :

180W

Switching Energy :

1.06mJ (on), 620μJ (off)

Packaging :

Tube

Lead Free :

Lead Free

Mount :

Through Hole

Mounting Type :

Through Hole

IGBT Type :

Trench

Qualification Status :

Not Qualified

Operating Temperature :

-55°C~150°C TJ

Turn On Time :

45 ns

Element Configuration :

Single