IRG7PH30K10DPBF

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Mfr.Part #
IRG7PH30K10DPBF
Manufacturer
International Rectifier
Package / Case
TO-247-3
Datasheet
Download
Description
IGBT W/ULTRAFAST SOFT RECOVERY D
Stock
28,369
In Stock :
28,369

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Manufacturer :
International Rectifier
Product Category :
Transistors - IGBTs - Single
Fall Time-Max (tf) :
56ns
Time@Peak Reflow Temperature-Max (s) :
30
Published :
2009
ECCN Code :
EAR99
Max Power Dissipation :
180W
Lead Free :
Lead Free
Polarity/Channel Type :
N-Channel
Transistor Element Material :
SILICON
Turn On Delay Time :
23 ns
Package / Case :
TO-247-3
Switching Energy :
530μJ (on), 380μJ (off)
Number of Pins :
3
Gate Charge :
45nC
Td (on/off) @ 25°C :
14ns/110ns
Length :
15.87mm
Collector Emitter Voltage (VCEO) :
2.35V
Case Connection :
COLLECTOR
Width :
5.3086mm
Element Configuration :
Single
Voltage - Collector Emitter Breakdown (Max) :
1200V
Rise Time-Max :
41ns
RoHS Status :
RoHS Compliant
Collector Emitter Breakdown Voltage :
1.2kV
IGBT Type :
Trench
Transistor Application :
POWER CONTROL
Packaging :
Tube
Mount :
Through Hole
Power Dissipation :
180W
REACH SVHC :
No SVHC
Current - Collector Pulsed (Icm) :
27A
Reverse Recovery Time :
140ns
Radiation Hardening :
No
Turn-Off Delay Time :
130 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate-Emitter Thr Voltage-Max :
7.5V
Number of Terminations :
3
Number of Elements :
1
Operating Temperature :
-55°C~150°C TJ
Input Type :
Standard
Collector Emitter Saturation Voltage :
2.35V
Vce(on) (Max) @ Vge, Ic :
2.35V @ 15V, 9A
Terminal Finish :
MATTE TIN OVER NICKEL
Turn Off Time-Nom (toff) :
390 ns
Mounting Type :
Through Hole
Turn On Time :
34 ns
JESD-609 Code :
e3
Test Condition :
600V, 9A, 22 Ω, 15V
Max Collector Current :
30A
Height :
20.7mm
JEDEC-95 Code :
TO-247AC
Peak Reflow Temperature (Cel) :
250
Datasheets
IRG7PH30K10DPBF
Introducing Transistors - IGBTs - Single International Rectifier IRG7PH30K10DPBF from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Number of Pins:3, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, IRG7PH30K10DPBF pinout, IRG7PH30K10DPBF datasheet PDF, IRG7PH30K10DPBF amp .Beyond Transistors - IGBTs - Single International Rectifier IRG7PH30K10DPBF ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

International Rectifier IRG7PH30K10DPBF


IRG7PH30K10DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IRG7PH30K10DPBF Description


IRG7PH30K10DPBF is a 1200v insulated gate bipolar transistor with an ultrafast soft recovery diode. The transistor IRG7PH30K10DPBF provides high efficiency in a wide range of applications, rugged transient performance for increased reliability, and excellent current sharing in parallel operation. It is suitable for a wide range of switching frequencies due to low Vce(on) and low switching losses. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor IRG7PH30K10DPBF is in the TO247AC package with 150W power dissipation.



IRG7PH30K10DPBF Features


Low VcE (ON) Trench IGBTTechnology

Low switching losses

10 μS short circuit SOA

Square RBSOA

100% of the parts tested for lLm

Positive VcE (ON) Temperature coefficient

Ultra-fast soft Recovery Co-Pak Diode

Tight parameter distribution

Lead-Free Package



IRG7PH30K10DPBF Applications


Automotive 

Hybrid, electric & powertrain systems 

Industrial 

Aerospace & Defense 

Enterprise systems 

Datacenter & enterprise computing


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