IRG7PG42UD-EPBF
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- Mfr.Part #
- IRG7PG42UD-EPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT 1000V 85A 320W TO247AD
- Stock
- 11,109
- In Stock ：
- 11,109
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Max Collector Current :
- 85A
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Vce(on) (Max) @ Vge, Ic :
- 2V @ 15V, 30A
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tube
- Test Condition :
- 600V, 30A, 10 Ω, 15V
- Reach Compliance Code :
- Unknown
- Collector Emitter Breakdown Voltage :
- 1kV
- Mount :
- Through Hole
- Voltage - Collector Emitter Breakdown (Max) :
- 1000V
- Input Type :
- Standard
- RoHS Status :
- RoHS Compliant
- Published :
- 2014
- Switching Energy :
- 2.11mJ (on), 1.18mJ (off)
- Current - Collector Pulsed (Icm) :
- 90A
- ECCN Code :
- EAR99
- Td (on/off) @ 25°C :
- 25ns/229ns
- Max Power Dissipation :
- 320W
- Gate Charge :
- 157nC
- Power - Max :
- 320W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-247-3
- Reverse Recovery Time :
- 153 ns
- Collector Emitter Voltage (VCEO) :
- 2V
- IGBT Type :
- Trench
- Datasheets
- IRG7PG42UD-EPBF
IRG7PG42UD-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG7PG42UD-EPBF Description
A bipolar transistor is a semiconductor device commonly used for amplification. The device can amplify analog or digital signals. It can also switch DC or function as an oscillator. Physically, a bipolar transistor amplifies current, but it can be connected in circuits designed to amplify voltage or power.
IRG7PG42UD-EPBF Features
Low VcE (oN) trench IGBT technology Low switching losses Square RBSOA
100% of the parts tested for
Positive VcE(ontemperature co-efficient Ultra fast soft recovery co-pak diode Tight parameter distribution Lead-free package
IRG7PG42UD-EPBF Applications
U.P.S. Welding
Solar Inverter Induction heating
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