IRG7PG35U-EPBF

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Mfr.Part #
IRG7PG35U-EPBF
Manufacturer
Infineon Technologies
Package / Case
TO-247-3
Datasheet
Download
Description
IGBT 1000V 55A 210W TO247AD
Stock
3,017
In Stock :
3,017

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Single
Test Condition :
600V, 20A, 10 Ω, 15V
Mounting Type :
Through Hole
Vce(on) (Max) @ Vge, Ic :
2.2V @ 15V, 20A
Operating Temperature :
-55°C~175°C TJ
Current - Collector Pulsed (Icm) :
60A
RoHS Status :
RoHS Compliant
Element Configuration :
Single
Published :
2014
Collector Emitter Breakdown Voltage :
1kV
Td (on/off) @ 25°C :
30ns/160ns
Gate Charge :
85nC
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Voltage (VCEO) :
2.2V
ECCN Code :
EAR99
Max Collector Current :
55A
Switching Energy :
1.06mJ (on), 620μJ (off)
Input Type :
Standard
Packaging :
Tube
IGBT Type :
Trench
Max Power Dissipation :
210W
Reach Compliance Code :
Unknown
Power - Max :
210W
Package / Case :
TO-247-3
Voltage - Collector Emitter Breakdown (Max) :
1000V
Mount :
Through Hole
Datasheets
IRG7PG35U-EPBF
Introducing Transistors - IGBTs - Single Infineon Technologies IRG7PG35U-EPBF from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-247-3, IRG7PG35U-EPBF pinout, IRG7PG35U-EPBF datasheet PDF, IRG7PG35U-EPBF amp .Beyond Transistors - IGBTs - Single Infineon Technologies IRG7PG35U-EPBF ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRG7PG35U-EPBF


IRG7PG35U-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IRG7PG35U-EPBF Description


IRG7PG35U-EPBF is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode, which is designed based on low VCE (ON) trench IGBT technology. Due to low VCE (ON) and low switching losses, it is ideally suitable for a wide range of switching frequencies. Increased reliability can be ensured based on rugged transient performance. Moreover, the IRG7PG35U-EPBF IGBT is able to deliver excellent current sharing in parallel operation and tight parameter distribution.



IRG7PG35U-EPBF Features


Tight parameter distribution

Low VCE (ON) trench IGBT technology

Low switching losses

Square RBSOA

Positive VCE (ON) temperature coefficient

Ultra-fast soft recovery co-packaged diode



IRG7PG35U-EPBF Applications


U.P.S

Welding

Solar inverter

Induction heating


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