IRG7CH73UEF-R
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- Mfr.Part #
- IRG7CH73UEF-R
- Manufacturer
- Infineon Technologies
- Package / Case
- Die
- Datasheet
- Download
- Description
- IGBT 1200V ULTRA FAST DIE
- Stock
- 19,541
- In Stock ：
- 19,541
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Collector Current-Max (IC) :
- 75A
- Mount :
- Surface Mount
- RoHS Status :
- RoHS Compliant
- Gate-Emitter Thr Voltage-Max :
- 6V
- Gate Charge :
- 540nC
- Vce(on) (Max) @ Vge, Ic :
- 2V @ 15V, 75A
- Td (on/off) @ 25°C :
- 90ns/580ns
- Packaging :
- Bulk
- Polarity/Channel Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Mounting Type :
- Surface Mount
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Collector Emitter Breakdown Voltage :
- 1.2kV
- Package / Case :
- Die
- Operating Temperature :
- -40°C~175°C TJ
- Gate-Emitter Voltage-Max :
- 30V
- Input Type :
- Standard
- Test Condition :
- 600V, 75A, 5 Ω, 15V
- Collector Emitter Voltage (VCEO) :
- 2V
- Datasheets
- IRG7CH73UEF-R
IRG7CH73UEF-R datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG7CH73UEF-R Description
IRG7CH73UEF-R is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode, which is manufactured by Infineon Technologies to provide high efficiency in a wide range of applications. Due to its square RBSOA, rugged transient performance can be ensured. Moreover, excellent current sharing can be delivered in parallel operation due to its positive VCE(ON) temperature coefficient and integrated gate resistor. With low VCE(ON) and switching Losses, the IRG7CH73UEF-R IGBT is able to provide high efficiency in a wide range of applications.
IRG7CH73UEF-R Features
Low VCE(ON) and switching Losses
Square RBSOA
Maximum junction temperature 175°C
Positive VCE (ON) temperature coefficient
Integrated gate resistor
IRG7CH73UEF-R Applications
Medium power drives
HEV inverter
UPS
Welding
Induction heating
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