IRG6S330UPBF
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- Mfr.Part #
- IRG6S330UPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- IGBT 330V 70A 160W D2PAK
- Stock
- 15,360
- In Stock ：
- 15,360
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Operating Temperature :
- -40°C~150°C TJ
- Gate Charge :
- 86nC
- Test Condition :
- 196V, 25A, 10Ohm
- Min Operating Temperature :
- -40°C
- Max Collector Current :
- 70A
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Input Type :
- Standard
- Td (on/off) @ 25°C :
- 39ns/120ns
- IGBT Type :
- Trench
- Power Dissipation :
- 160W
- Supplier Device Package :
- D2PAK
- Number of Pins :
- 3
- Max Power Dissipation :
- 160W
- RoHS Status :
- RoHS Compliant
- Collector Emitter Voltage (VCEO) :
- 2.1V
- Collector Emitter Saturation Voltage :
- 2.1V
- Packaging :
- Tube
- Mount :
- Surface Mount
- Voltage - Collector Emitter Breakdown (Max) :
- 330V
- Published :
- 2009
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Operating Temperature :
- 150°C
- Collector Emitter Breakdown Voltage :
- 330V
- Vce(on) (Max) @ Vge, Ic :
- 2.1V @ 15V, 70A
- Power - Max :
- 160W
- Radiation Hardening :
- No
- Current - Collector (Ic) (Max) :
- 70A
- Datasheets
- IRG6S330UPBF
IRG6S330UPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG6S330UPBF Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust, and reliable device for PDP applications.
IRG6S330UPBF Features
Advanced Trench IGBT Technology
Optimized for Sustain and Energy Recovery circuits in PDP applications
Low VCE(on) and Energy per Pulse (EPULSETM) for improved panel efficiency
High repetitive peak current capability
Lead-Free package
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