IRG6B330UDPBF

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Mfr.Part #
IRG6B330UDPBF
Manufacturer
International Rectifier
Package / Case
TO-220-3
Datasheet
Download
Description
IRG6B330UD - IGBT WITH ANTI-PARA
Stock
5,100
In Stock :
5,100

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Manufacturer :
International Rectifier
Product Category :
Transistors - IGBTs - Single
Element Configuration :
Single
Collector Emitter Voltage (VCEO) :
2.76V
Max Collector Current :
70A
RoHS Status :
ROHS3 Compliant
Power - Max :
160W
JEDEC-95 Code :
TO-220AB
Max Power Dissipation :
160W
Mount :
Through Hole
Input Type :
Standard
Number of Terminations :
3
Polarity/Channel Type :
N-Channel
Qualification Status :
Not Qualified
Reverse Recovery Time :
60 ns
ECCN Code :
EAR99
Gate Charge :
85nC
Test Condition :
196V, 25A, 10 Ω
Packaging :
Tube
Number of Pins :
3
Transistor Element Material :
SILICON
Turn On Time :
83 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Turn Off Time-Nom (toff) :
411 ns
Mounting Type :
Through Hole
Package / Case :
TO-220-3
Gate-Emitter Thr Voltage-Max :
5V
Operating Temperature :
-40°C~150°C TJ
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Td (on/off) @ 25°C :
47ns/176ns
Vce(on) (Max) @ Vge, Ic :
2.76V @ 15V, 120A
Factory Lead Time :
16 Weeks
Published :
2010
Collector Emitter Breakdown Voltage :
330V
Number of Elements :
1
IGBT Type :
Trench
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Datasheets
IRG6B330UDPBF
Introducing Transistors - IGBTs - Single International Rectifier IRG6B330UDPBF from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Number of Pins:3, Mounting Type:Through Hole, Package / Case:TO-220-3, Operating Temperature:-40°C~150°C TJ, IRG6B330UDPBF pinout, IRG6B330UDPBF datasheet PDF, IRG6B330UDPBF amp .Beyond Transistors - IGBTs - Single International Rectifier IRG6B330UDPBF ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

International Rectifier IRG6B330UDPBF


IRG6B330UDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IRG6B330UDPBF  Description

This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improves panel efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust, and reliable device for PDP applications.



IRG6B330UDPBF  Features

Advanced Trench IGBT Technology

Optimized for Sustain and Energy Recovery

Circuits in PDP Applications

Low VCE(on) and Energy per Pulse (EPULSETM)

for Improved Panel Efficiency

High Repetitive Peak Current Capability

Lead-Free Package


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