IRG6B330UDPBF
- Mfr.Part #
- IRG6B330UDPBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- IRG6B330UD - IGBT WITH ANTI-PARA
- Stock
- 5,100
- In Stock :
- 5,100
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - IGBTs - Single
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 2.76V
- Max Collector Current :
- 70A
- RoHS Status :
- ROHS3 Compliant
- Power - Max :
- 160W
- JEDEC-95 Code :
- TO-220AB
- Max Power Dissipation :
- 160W
- Mount :
- Through Hole
- Input Type :
- Standard
- Number of Terminations :
- 3
- Polarity/Channel Type :
- N-Channel
- Qualification Status :
- Not Qualified
- Reverse Recovery Time :
- 60 ns
- ECCN Code :
- EAR99
- Gate Charge :
- 85nC
- Test Condition :
- 196V, 25A, 10 Ω
- Packaging :
- Tube
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Turn On Time :
- 83 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn Off Time-Nom (toff) :
- 411 ns
- Mounting Type :
- Through Hole
- Package / Case :
- TO-220-3
- Gate-Emitter Thr Voltage-Max :
- 5V
- Operating Temperature :
- -40°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Td (on/off) @ 25°C :
- 47ns/176ns
- Vce(on) (Max) @ Vge, Ic :
- 2.76V @ 15V, 120A
- Factory Lead Time :
- 16 Weeks
- Published :
- 2010
- Collector Emitter Breakdown Voltage :
- 330V
- Number of Elements :
- 1
- IGBT Type :
- Trench
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Datasheets
- IRG6B330UDPBF

IRG6B330UDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG6B330UDPBF Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improves panel efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust, and reliable device for PDP applications.
IRG6B330UDPBF Features
Advanced Trench IGBT Technology
Optimized for Sustain and Energy Recovery
Circuits in PDP Applications
Low VCE(on) and Energy per Pulse (EPULSETM)
for Improved Panel Efficiency
High Repetitive Peak Current Capability
Lead-Free Package
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