IRG6I330UPBF

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Mfr.Part #
IRG6I330UPBF
Manufacturer
Infineon Technologies
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
IGBT 330V 28A 43W TO220ABFP
Stock
7,956
In Stock :
7,956

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Single
Max Power Dissipation :
43W
Gate Charge :
86nC
Current - Collector (Ic) (Max) :
28A
Collector Emitter Voltage (VCEO) :
1.55V
Operating Temperature :
-40°C~150°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
IGBT Type :
Trench
Power - Max :
43W
Base Part Number :
IRG6I330UPBF
Supplier Device Package :
TO-220AB Full-Pak
Number of Pins :
3
Min Operating Temperature :
-40°C
Td (on/off) @ 25°C :
39ns/120ns
Test Condition :
196V, 25A, 10Ohm
Max Operating Temperature :
150°C
Max Collector Current :
28A
Collector Emitter Breakdown Voltage :
330V
Packaging :
Tube
Element Configuration :
Single
Mount :
Through Hole
RoHS Status :
RoHS Compliant
Vce(on) (Max) @ Vge, Ic :
1.55V @ 15V, 28A
Voltage - Collector Emitter Breakdown (Max) :
330V
Collector Emitter Saturation Voltage :
1.55V
Power Dissipation :
43W
Package / Case :
TO-220-3 Full Pack
Published :
2009
Mounting Type :
Through Hole
Input Type :
Standard
Datasheets
IRG6I330UPBF
Introducing Transistors - IGBTs - Single Infineon Technologies IRG6I330UPBF from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-40°C~150°C TJ, Base Part Number:IRG6I330UPBF, Number of Pins:3, Package / Case:TO-220-3 Full Pack, Mounting Type:Through Hole, IRG6I330UPBF pinout, IRG6I330UPBF datasheet PDF, IRG6I330UPBF amp .Beyond Transistors - IGBTs - Single Infineon Technologies IRG6I330UPBF ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRG6I330UPBF


IRG6I330UPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IRG6I330UPBF                  Description


This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced   trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel   efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current   capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP   applications.


IRG6I330UPBF             Features   


 Advanced Trench IGBT Technology

 Optimized for Sustain and Energy Recovery

circuits in PDP applications

 Low VCE(on) and Energy per Pulse (EPULSETM)

for improved panel efficiency

 High repetitive peak current capability

 Lead Free package

 


IRG6I330UPBF                Applications


?Drives

?Industrial   Power   Supplies

-Industrial   SMPS

-Industrial   UPS


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