IRFZ48ZS

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Terminal Position :

Single

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin/Lead (Sn/Pb)

Avalanche Energy Rating (Eas) :

73 mJ

Series :

HEXFET®

FET Type :

N-Channel

JESD-609 Code :

e0

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

61A Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Elements :

1

Transistor Application :

SWITCHING

Case Connection :

DRAIN

RoHS Status :

Non-RoHS Compliant

Mounting Type :

Surface Mount

Power Dissipation-Max :

91W Tc

Gate Charge (Qg) (Max) @ Vgs :

64nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

1720pF @ 25V

Rds On (Max) @ Id, Vgs :

11m Ω @ 37A, 10V

Drain to Source Voltage (Vdss) :

55V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Form :

Gull wing

Operating Temperature :

-55°C~175°C TJ

Pulsed Drain Current-Max (IDM) :

240A

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Packaging :

Tube

DS Breakdown Voltage-Min :

55V

Drain Current-Max (Abs) (ID) :

61A

Number of Terminations :

2

Published :

2001

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSSO-G2

Peak Reflow Temperature (Cel) :

225

Drain-source On Resistance-Max :

0.011Ohm