IRFZ48ZPBF
- Mfr.Part #
- IRFZ48ZPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 61A TO220AB
- Stock
- 14,790
- In Stock :
- 14,790
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Nominal Vgs :
- 4 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1720pF @ 25V
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 61A
- Gate to Source Voltage (Vgs) :
- 20V
- Input Capacitance :
- 1.72nF
- Height :
- 8.77mm
- REACH SVHC :
- No SVHC
- Resistance :
- 11Ohm
- Lead Free :
- Lead Free
- Rds On Max :
- 11 mΩ
- Current - Continuous Drain (Id) @ 25°C :
- 61A Tc
- Series :
- HEXFET®
- Mounting Type :
- Through Hole
- Packaging :
- Tube
- Vgs (Max) :
- ±20V
- Turn-Off Delay Time :
- 35 ns
- Drain to Source Breakdown Voltage :
- 55V
- Number of Pins :
- 3
- RoHS Status :
- RoHS Compliant
- Max Operating Temperature :
- 175°C
- Operating Temperature :
- -55°C~175°C TJ
- Number of Elements :
- 1
- Current Rating :
- 61A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Voltage - Rated DC :
- 55V
- Turn On Delay Time :
- 15 ns
- Package / Case :
- TO-220-3
- Drain to Source Voltage (Vdss) :
- 55V
- Gate Charge (Qg) (Max) @ Vgs :
- 64nC @ 10V
- Power Dissipation :
- 91W
- Power Dissipation-Max :
- 91W Tc
- Rds On (Max) @ Id, Vgs :
- 11mOhm @ 37A, 10V
- Recovery Time :
- 31 ns
- Published :
- 2001
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Min Operating Temperature :
- -55°C
- Rise Time :
- 69ns
- Dual Supply Voltage :
- 55V
- Drain to Source Resistance :
- 11mOhm
- Supplier Device Package :
- TO-220AB
- Mount :
- Through Hole
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Datasheets
- IRFZ48ZPBF

N-Channel Tube 11mOhm @ 37A, 10V ±20V 1720pF @ 25V 64nC @ 10V 55V TO-220-3
IRFZ48ZPBF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1720pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 55V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 55V.As a result of its turn-off delay time, which is 35 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 11mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 15 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 55V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IRFZ48ZPBF Features
a continuous drain current (ID) of 61A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 35 ns
single MOSFETs transistor is 11mOhm
a 55V drain to source voltage (Vdss)
IRFZ48ZPBF Applications
There are a lot of Infineon Technologies
IRFZ48ZPBF applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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