IRFZ48ZLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

91W

Input Capacitance (Ciss) (Max) @ Vds :

1720pF @ 25V

Vgs (Max) :

±20V

Max Operating Temperature :

175°C

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2010

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

55V

Rds On (Max) @ Id, Vgs :

11mOhm @ 37A, 10V

Drain to Source Voltage (Vdss) :

55V

Supplier Device Package :

TO-262

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

61A

Rise Time :

69ns

Gate Charge (Qg) (Max) @ Vgs :

64nC @ 10V

Input Capacitance :

1.72nF

Series :

HEXFET®

Current Rating :

61A

Current - Continuous Drain (Id) @ 25°C :

61A Tc

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

Drain to Source Breakdown Voltage :

55V

Number of Pins :

3

Rds On Max :

11 mΩ

Lead Free :

Lead Free

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Power Dissipation-Max :

91W Tc

FET Type :

N-Channel

Packaging :

Tube

Min Operating Temperature :

-55°C

Turn-Off Delay Time :

35 ns

Mount :

Through Hole

Turn On Delay Time :

15 ns

RoHS Status :

RoHS Compliant