IRFZ48Z

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.011Ohm

Number of Terminations :

2

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Application :

SWITCHING

Case Connection :

DRAIN

JEDEC-95 Code :

TO-263AB

Drain to Source Voltage (Vdss) :

55V

ECCN Code :

EAR99

Power Dissipation-Max :

91W Tc

Gate Charge (Qg) (Max) @ Vgs :

64nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Form :

Gull wing

RoHS Status :

Non-RoHS Compliant

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Operating Temperature :

-55°C~175°C TJ

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Package / Case :

TO-220-3

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

1720pF @ 25V

Terminal Position :

Single

Series :

HEXFET®

Number of Elements :

1

DS Breakdown Voltage-Min :

55V

Current - Continuous Drain (Id) @ 25°C :

61A Tc

Additional Feature :

AVALANCHE RATED, ULTRA-LOW RESISTANCE

Drain Current-Max (Abs) (ID) :

61A

Published :

2003

Rds On (Max) @ Id, Vgs :

11m Ω @ 37A, 10V

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

240A

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

Surface Mount :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tube

Avalanche Energy Rating (Eas) :

120 mJ

Mounting Type :

Through Hole