IRFZ48VS

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Number of Terminations :

2

JESD-30 Code :

R-PSSO-G2

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

30

Surface Mount :

yes

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Terminal Finish :

Tin/Lead (Sn/Pb)

Series :

HEXFET®

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

166 mJ

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Power Dissipation-Max :

150W Tc

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e0

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

225

DS Breakdown Voltage-Min :

60V

Rds On (Max) @ Id, Vgs :

12m Ω @ 43A, 10V

Packaging :

Tube

Drain-source On Resistance-Max :

0.012Ohm

Drain to Source Voltage (Vdss) :

60V

Drain Current-Max (Abs) (ID) :

72A

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

290A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RoHS Status :

Non-RoHS Compliant

Terminal Position :

Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Published :

2001

Transistor Element Material :

SILICON

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

72A Tc

Input Capacitance (Ciss) (Max) @ Vds :

1985pF @ 25V