IRFZ48VPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

200ns

Fall Time (Typ) :

166 ns

Nominal Vgs :

4 V

Radiation Hardening :

No

Operating Temperature :

-55°C~175°C TJ

Case Connection :

DRAIN

JEDEC-95 Code :

TO-220AB

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-609 Code :

e3

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Threshold Voltage :

4V

Turn On Delay Time :

7.6 ns

Published :

2001

ECCN Code :

EAR99

Number of Pins :

3

Lead Free :

Lead Free

Mount :

Through Hole

Termination :

Through Hole

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

1985pF @ 25V

Package / Case :

TO-220-3

Turn-Off Delay Time :

157 ns

Power Dissipation-Max :

150W Tc

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

72A Tc

Series :

HEXFET®

Pulsed Drain Current-Max (IDM) :

290A

Transistor Element Material :

SILICON

Width :

4.82mm

Recovery Time :

100 ns

Factory Lead Time :

14 Weeks

Length :

10.6426mm

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

30

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

12m Ω @ 43A, 10V

Current Rating :

72A

Resistance :

12mOhm

Packaging :

Tube

Number of Elements :

1

Voltage - Rated DC :

60V

Power Dissipation :

150W

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Dual Supply Voltage :

60V

Continuous Drain Current (ID) :

72A

Drain to Source Breakdown Voltage :

60V

Height :

8.77mm

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

250

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE