IRFZ48STRLPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Vgs(th) (Max) @ Id :

4V @ 250µA

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

290 A

JESD-30 Code :

R-PSSO-G2

Terminal Position :

Single

Surface Mount :

yes

Operating Temperature :

-55°C ~ 175°C (TJ)

HTS Code :

8541.29.00.95

Gate Charge (Qg) (Max) @ Vgs :

110 nC @ 10 V

Pbfree Code :

yes

Package Shape :

RECTANGULAR

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

60 V

Peak Reflow Temperature (Cel) :

260

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

2400 pF @ 25 V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Series :

IRFZ

Product Status :

Active

Polarity/Channel Type :

N-Channel

Reach Compliance Code :

Compliant

Number of Elements :

1

Mounting Type :

Surface Mount

Configuration :

Single

FET Feature :

-

Drain to Source Voltage (Vdss) :

60 V

Current - Continuous Drain (Id) @ 25°C :

50A (Tc)

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.018 Ω

Supplier Device Package :

D2PAK (TO-263)

Transistor Application :

SWITCHING

Pin Count :

4

Manufacturer :

Vishay Intertechnologies

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

18mOhm @ 43A, 10V

Number of Terminals :

2

JEDEC-95 Code :

TO-263AB

Drive Voltage (Max Rds On, Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

100 mJ

Power Dissipation (Max) :

3.7W (Ta), 190W (Tc)