IRFZ48RSPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

4

Operating Temperature :

-55°C~175°C TJ

Height :

4.83mm

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Rds On (Max) @ Id, Vgs :

18m Ω @ 43A, 10V

Element Configuration :

Single

Rise Time :

250ns

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Channels :

1

Power Dissipation :

190W

Number of Terminations :

2

Turn On Delay Time :

8.1 ns

Number of Pins :

3

Continuous Drain Current (ID) :

50A

ECCN Code :

EAR99

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id :

4V @ 250µA

Factory Lead Time :

8 Weeks

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

290A

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

60V

JESD-30 Code :

R-PSSO-G2

Weight :

1.437803g

Fall Time (Typ) :

250 ns

Current Rating :

50A

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Published :

2014

Packaging :

Tube

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Width :

9.65mm

Turn-Off Delay Time :

210 ns

Terminal Form :

Gull wing

Case Connection :

DRAIN

Length :

10.67mm

Number of Elements :

1

Power Dissipation-Max :

190W Tc

Input Capacitance (Ciss) (Max) @ Vds :

2400pF @ 25V