IRFZ48RPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Radiation Hardening :

No

Lead Free :

Lead Free

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Number of Channels :

1

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Element Configuration :

Single

JEDEC-95 Code :

TO-220AB

Voltage - Rated DC :

60V

Continuous Drain Current (ID) :

50A

Additional Feature :

AVALANCHE RATED

Gate to Source Voltage (Vgs) :

20V

Pbfree Code :

yes

Number of Pins :

3

ECCN Code :

EAR99

Turn On Delay Time :

8.1 ns

Length :

10.41mm

Packaging :

Tube

Rise Time :

250ns

Transistor Application :

SWITCHING

Weight :

6.000006g

Operating Temperature :

-55°C~175°C TJ

Width :

4.7mm

Pin Count :

3

Published :

2011

Height :

9.01mm

Turn-Off Delay Time :

210 ns

Vgs (Max) :

±20V

Mounting Type :

Through Hole

Power Dissipation :

190W

Factory Lead Time :

8 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

290A

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

60V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Package / Case :

TO-220-3

Operating Mode :

ENHANCEMENT MODE

Recovery Time :

180 ns

Fall Time (Typ) :

250 ns

Current Rating :

50A

Number of Terminations :

3

Power Dissipation-Max :

190W Tc

Case Connection :

DRAIN

Mount :

Through Hole

Rds On (Max) @ Id, Vgs :

18m Ω @ 43A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

2400pF @ 25V