IRFZ48PBF
- Mfr.Part #
- IRFZ48PBF
- Manufacturer
- Vishay
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 50A TO220AB
- Stock
- 4,364
- In Stock :
- 4,364
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 2400pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 10V
- Fall Time (Typ) :
- 250 ns
- Drain to Source Breakdown Voltage :
- 60V
- Length :
- 10.41mm
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Turn-Off Delay Time :
- 210 ns
- Min Operating Temperature :
- -55°C
- Nominal Vgs :
- 4 V
- Operating Temperature :
- -55°C~175°C TJ
- Max Operating Temperature :
- 175°C
- Rds On (Max) @ Id, Vgs :
- 18mOhm @ 43A, 10V
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Weight :
- 6.000006g
- FET Type :
- N-Channel
- Vgs (Max) :
- ±20V
- Rds On Max :
- 18 mΩ
- Supplier Device Package :
- TO-220AB
- Mounting Type :
- Through Hole
- Packaging :
- Tube
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Gate to Source Voltage (Vgs) :
- 20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rise Time :
- 250ns
- Continuous Drain Current (ID) :
- 50A
- Power Dissipation-Max :
- 190W Tc
- Mount :
- Through Hole
- Drain to Source Voltage (Vdss) :
- 60V
- Height :
- 9.01mm
- Power Dissipation :
- 190W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance :
- 2.4nF
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Width :
- 4.7mm
- Number of Elements :
- 1
- Published :
- 2014
- Package / Case :
- TO-220-3
- Drain to Source Resistance :
- 18mOhm
- Number of Channels :
- 1
- Turn On Delay Time :
- 8.1 ns
- Factory Lead Time :
- 11 Weeks
- Datasheets
- IRFZ48PBF
N-Channel Tube 18mOhm @ 43A, 10V ±20V 2400pF @ 25V 110nC @ 10V 60V TO-220-3
IRFZ48PBF Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2400pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 50A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 60V, and this device has a drainage-to-source breakdown voltage of 60VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 210 ns.This device has a drain-to-source resistance of 18mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8.1 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 60V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRFZ48PBF Features
a continuous drain current (ID) of 50A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 210 ns
single MOSFETs transistor is 18mOhm
a 60V drain to source voltage (Vdss)
IRFZ48PBF Applications
There are a lot of Vishay Siliconix
IRFZ48PBF applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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