IRFZ48NSTRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Dual Supply Voltage :

55V

Peak Reflow Temperature (Cel) :

260

Current - Continuous Drain (Id) @ 25°C :

64A Tc

Voltage - Rated DC :

55V

Fall Time (Typ) :

50 ns

Length :

10.668mm

Transistor Element Material :

SILICON

Series :

HEXFET®

Mount :

Surface Mount

Turn On Delay Time :

12 ns

JESD-30 Code :

R-PSSO-G2

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

34 ns

Terminal Form :

Gull wing

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Factory Lead Time :

12 Weeks

Recovery Time :

100 ns

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

1970pF @ 25V

REACH SVHC :

No SVHC

Power Dissipation-Max :

3.8W Ta 130W Tc

Reverse Recovery Time :

100 ns

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

14m Ω @ 32A, 10V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Resistance :

14mOhm

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

81nC @ 10V

Current Rating :

64A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

4V

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Continuous Drain Current (ID) :

64A

Number of Elements :

1

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Width :

9.65mm

Power Dissipation :

130W

Height :

4.826mm

JESD-609 Code :

e3

Rise Time :

78ns

Drain to Source Breakdown Voltage :

55V

Published :

2001

Nominal Vgs :

4 V

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Lead Free :

Contains Lead, Lead Free

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

2

Termination :

SMD/SMT

ECCN Code :

EAR99

Number of Pins :

3