IRFZ48NPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Published :

2001

Nominal Vgs :

4 V

Dual Supply Voltage :

55V

Width :

4.69mm

Peak Reflow Temperature (Cel) :

250

Current Rating :

64A

Threshold Voltage :

4V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Package / Case :

TO-220-3

Factory Lead Time :

12 Weeks

Current - Continuous Drain (Id) @ 25°C :

64A Tc

Number of Pins :

3

Lead Pitch :

2.54mm

Rise Time :

78ns

JEDEC-95 Code :

TO-220AB

Continuous Drain Current (ID) :

64A

Drain to Source Breakdown Voltage :

55V

Contact Plating :

Tin

Time@Peak Reflow Temperature-Max (s) :

30

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Radiation Hardening :

No

Power Dissipation-Max :

130W Tc

Input Capacitance (Ciss) (Max) @ Vds :

1970pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Termination :

Through Hole

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Packaging :

Tube

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

94W

Mounting Type :

Through Hole

Operating Temperature :

-55°C~175°C TJ

Case Connection :

DRAIN

Recovery Time :

100 ns

Voltage - Rated DC :

55V

Gate Charge (Qg) (Max) @ Vgs :

81nC @ 10V

ECCN Code :

EAR99

Height :

8.77mm

Rds On (Max) @ Id, Vgs :

14m Ω @ 32A, 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

RoHS Status :

ROHS3 Compliant

Length :

10.54mm

Transistor Element Material :

SILICON

Turn On Delay Time :

12 ns

Mount :

Through Hole

Turn-Off Delay Time :

34 ns

Number of Elements :

1

Number of Terminations :

3

Element Configuration :

Single

Vgs (Max) :

±20V

FET Type :

N-Channel

Fall Time (Typ) :

50 ns

Series :

HEXFET®

Drive Voltage (Max Rds On,Min Rds On) :

10V