IRFZ48NLPBF
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- Mfr.Part #
- IRFZ48NLPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 64A TO262
- Stock
- 9,703
- In Stock ：
- 9,703
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Resistance :
- 14mOhm
- Packaging :
- Tube
- Lead Free :
- Lead Free
- Mount :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Width :
- 4.826mm
- Current - Continuous Drain (Id) @ 25°C :
- 64A Tc
- Number of Pins :
- 3
- Vgs (Max) :
- ±20V
- Current Rating :
- 64A
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Published :
- 2004
- Rise Time :
- 78ns
- Voltage - Rated DC :
- 55V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1970pF @ 25V
- Operating Temperature :
- -55°C~175°C TJ
- Power Dissipation :
- 140W
- Series :
- HEXFET®
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 14mOhm @ 32A, 10V
- Input Capacitance :
- 1.97nF
- Turn-Off Delay Time :
- 34 ns
- Height :
- 9.65mm
- Gate Charge (Qg) (Max) @ Vgs :
- 81nC @ 10V
- Continuous Drain Current (ID) :
- 64A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On Max :
- 14 mΩ
- Length :
- 10.668mm
- Radiation Hardening :
- No
- Drain to Source Voltage (Vdss) :
- 55V
- FET Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Min Operating Temperature :
- -55°C
- Power Dissipation-Max :
- 3.8W Ta 130W Tc
- Mounting Type :
- Through Hole
- Drain to Source Breakdown Voltage :
- 55V
- Supplier Device Package :
- TO-262
- Max Operating Temperature :
- 175°C
- Turn On Delay Time :
- 12 ns
- Fall Time (Typ) :
- 50 ns
- RoHS Status :
- RoHS Compliant
- Datasheets
- IRFZ48NLPBF
N-Channel Tube 14mOhm @ 32A, 10V ±20V 1970pF @ 25V 81nC @ 10V 55V TO-262-3 Long Leads, I2Pak, TO-262AA
IRFZ48NLPBF Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1970pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 64A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 55V, and this device has a drainage-to-source breakdown voltage of 55VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 34 ns.This device has a drain-to-source resistance of 14mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 12 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 55V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRFZ48NLPBF Features
a continuous drain current (ID) of 64A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 34 ns
single MOSFETs transistor is 14mOhm
a 55V drain to source voltage (Vdss)
IRFZ48NLPBF Applications
There are a lot of Infineon Technologies
IRFZ48NLPBF applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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