IRFZ46ZSTRLPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

Fall Time (Typ) :

39 ns

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

1460pF @ 25V

Current Rating :

51A

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

82W Tc

Continuous Drain Current (ID) :

51A

Current - Continuous Drain (Id) @ 25°C :

51A Tc

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Mount :

Surface Mount

Rise Time :

63ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

13 ns

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

13.6m Ω @ 31A, 10V

Avalanche Energy Rating (Eas) :

97 mJ

Factory Lead Time :

12 Weeks

Number of Elements :

1

JESD-609 Code :

e3

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

JESD-30 Code :

R-PSSO-G2

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

37 ns

Case Connection :

DRAIN

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Published :

2010

Vgs (Max) :

±20V

FET Type :

N-Channel

Element Configuration :

Single

Lead Free :

Contains Lead, Lead Free

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

55V

Dual Supply Voltage :

55V

Time@Peak Reflow Temperature-Max (s) :

30

Length :

10.668mm

Threshold Voltage :

4V

Vgs(th) (Max) @ Id :

4V @ 250µA

Pulsed Drain Current-Max (IDM) :

200A

Series :

HEXFET®

Terminal Form :

Gull wing

Resistance :

13.6mOhm

Number of Pins :

3

REACH SVHC :

No SVHC

Power Dissipation :

82W

Width :

9.65mm

Gate Charge (Qg) (Max) @ Vgs :

46nC @ 10V

Height :

4.826mm

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

55V

Radiation Hardening :

No

Nominal Vgs :

4 V