IRFZ46ZSTRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

37 ns

Transistor Element Material :

SILICON

Number of Pins :

3

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Power Dissipation :

82W

FET Type :

N-Channel

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

97 mJ

Peak Reflow Temperature (Cel) :

260

Current Rating :

51A

ECCN Code :

EAR99

Radiation Hardening :

No

Fall Time (Typ) :

39 ns

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Voltage - Rated DC :

55V

Gate Charge (Qg) (Max) @ Vgs :

46nC @ 10V

Factory Lead Time :

12 Weeks

Series :

HEXFET®

JESD-609 Code :

e3

Threshold Voltage :

4V

Gate to Source Voltage (Vgs) :

20V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Turn On Delay Time :

13 ns

Published :

2010

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation-Max :

82W Tc

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

51A Tc

Nominal Vgs :

4 V

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

13.6m Ω @ 31A, 10V

Vgs (Max) :

±20V

Operating Temperature :

-55°C~175°C TJ

Height :

4.826mm

Case Connection :

DRAIN

Number of Terminations :

2

Mount :

Surface Mount

Pulsed Drain Current-Max (IDM) :

200A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lead Free :

Contains Lead, Lead Free

Continuous Drain Current (ID) :

51A

Resistance :

13.6mOhm

Rise Time :

63ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Dual Supply Voltage :

55V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Width :

9.65mm

Input Capacitance (Ciss) (Max) @ Vds :

1460pF @ 25V

Length :

10.668mm

Drain to Source Breakdown Voltage :

55V