IRFZ46ZSPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

13.6m Ω @ 31A, 10V

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

200A

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Drain to Source Voltage (Vdss) :

55V

JESD-30 Code :

R-PSSO-G2

Time@Peak Reflow Temperature-Max (s) :

30

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Qualification Status :

Not Qualified

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

46nC @ 10V

Number of Terminations :

2

FET Type :

N-Channel

Published :

2004

Power Dissipation-Max :

82W Tc

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

97 mJ

Series :

HEXFET®

Drain-source On Resistance-Max :

0.0136Ohm

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Terminal Form :

Gull wing

Number of Elements :

1

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Vgs(th) (Max) @ Id :

4V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

51A Tc

Vgs (Max) :

±20V

DS Breakdown Voltage-Min :

55V

Drain Current-Max (Abs) (ID) :

51A

Input Capacitance (Ciss) (Max) @ Vds :

1460pF @ 25V

Surface Mount :

yes