IRFZ46ZSPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Drain to Source Voltage (Vdss) :

55V

Input Capacitance (Ciss) (Max) @ Vds :

1460pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

46nC @ 10V

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~175°C TJ

Terminal Position :

Single

JESD-609 Code :

e3

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

DS Breakdown Voltage-Min :

55V

Power Dissipation-Max :

82W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

51A

Vgs (Max) :

±20V

Number of Terminations :

2

Pulsed Drain Current-Max (IDM) :

200A

Case Connection :

DRAIN

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Vgs(th) (Max) @ Id :

4V @ 250µA

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

13.6m Ω @ 31A, 10V

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Current - Continuous Drain (Id) @ 25°C :

51A Tc

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

97 mJ

Series :

HEXFET®

Published :

2004

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.0136Ohm

Time@Peak Reflow Temperature-Max (s) :

30

Peak Reflow Temperature (Cel) :

260

FET Type :

N-Channel

Qualification Status :

Not Qualified