IRFZ46ZS

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

51A

Avalanche Energy Rating (Eas) :

97 mJ

Terminal Position :

Single

Power Dissipation-Max :

82W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

RoHS Status :

Non-RoHS Compliant

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

55V

Number of Elements :

1

Number of Terminations :

2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain-source On Resistance-Max :

0.0136Ohm

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

1460pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

51A Tc

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

13.6m Ω @ 31A, 10V

DS Breakdown Voltage-Min :

55V

Surface Mount :

yes

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

46nC @ 10V

Terminal Form :

Gull wing

Published :

2003

Vgs (Max) :

±20V

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

200A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

HEXFET®