IRFZ46Z

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Number of Terminations :

3

Additional Feature :

AVALANCHE RATED

JESD-30 Code :

R-PSFM-T3

Published :

2003

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Series :

HEXFET®

DS Breakdown Voltage-Min :

55V

ECCN Code :

EAR99

JEDEC-95 Code :

TO-220AB

Qualification Status :

Not Qualified

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.0136Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Power Dissipation-Max :

82W Tc

Drain Current-Max (Abs) (ID) :

51A

Avalanche Energy Rating (Eas) :

63 mJ

Surface Mount :

No

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

51A Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Rds On (Max) @ Id, Vgs :

13.6m Ω @ 31A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

1460pF @ 25V

Package / Case :

TO-220-3

Drain to Source Voltage (Vdss) :

55V

Pulsed Drain Current-Max (IDM) :

200A

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

46nC @ 10V

RoHS Status :

Non-RoHS Compliant

Terminal Position :

Single

Transistor Element Material :

SILICON