IRFZ46NSPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Lead Free :

Lead Free

Width :

9.652mm

Radiation Hardening :

No

Series :

HEXFET®

Nominal Vgs :

4 V

Number of Terminations :

2

Turn On Delay Time :

14 ns

Power Dissipation :

120W

Fall Time (Typ) :

57 ns

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

53A Tc

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G2

Voltage - Rated DC :

55V

Drain to Source Breakdown Voltage :

55V

Continuous Drain Current (ID) :

53A

Number of Pins :

3

Time@Peak Reflow Temperature-Max (s) :

30

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

16.5m Ω @ 28A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

1696pF @ 25V

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Turn-Off Delay Time :

52 ns

Mount :

Surface Mount

Current Rating :

53A

Length :

10.668mm

Dual Supply Voltage :

55V

Max Operating Temperature :

175°C

Power Dissipation-Max :

3.8W Ta 107W Tc

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Threshold Voltage :

4V

Vgs(th) (Max) @ Id :

4V @ 250µA

Packaging :

Tube

JESD-609 Code :

e3

Number of Elements :

1

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Element Configuration :

Single

ECCN Code :

EAR99

Published :

2004

Resistance :

16.5mOhm

Rise Time :

76ns

Height :

4.826mm

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

RoHS Status :

ROHS3 Compliant

Min Operating Temperature :

-55°C

Gate Charge (Qg) (Max) @ Vgs :

72nC @ 10V