IRFZ46NS

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Power Dissipation-Max :

3.8W Ta 107W Tc

Published :

2004

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

53A Tc

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Drain Current-Max (Abs) (ID) :

39A

Terminal Position :

Single

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

RoHS Status :

Non-RoHS Compliant

Vgs(th) (Max) @ Id :

4V @ 250µA

Surface Mount :

yes

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

16.5m Ω @ 28A, 10V

Drain-source On Resistance-Max :

0.0165ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Series :

HEXFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

1696pF @ 25V

Pulsed Drain Current-Max (IDM) :

180A

Avalanche Energy Rating (Eas) :

152 mJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

2

Drain to Source Voltage (Vdss) :

55V

Gate Charge (Qg) (Max) @ Vgs :

72nC @ 10V

DS Breakdown Voltage-Min :

55V

Case Connection :

DRAIN