IRFZ46NLPBF

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Mfr.Part #
IRFZ46NLPBF
Manufacturer
Infineon Technologies
Package / Case
TO-262-3 Long Leads, I2Pak, TO-262AA
Datasheet
Download
Description
MOSFET N-CH 55V 53A TO262
Stock
7,782
In Stock :
7,782

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Voltage - Rated DC :
55V
Mount :
Through Hole
Operating Temperature :
-55°C~175°C TJ
Series :
HEXFET®
Vgs (Max) :
±20V
Packaging :
Tube
Vgs(th) (Max) @ Id :
4V @ 250µA
Current Rating :
53A
Turn On Delay Time :
14 ns
Current - Continuous Drain (Id) @ 25°C :
53A Tc
Configuration :
SINGLE WITH BUILT-IN DIODE
Lead Free :
Lead Free
Published :
2004
Drive Voltage (Max Rds On,Min Rds On) :
10V
Height :
9.65mm
JESD-609 Code :
e3
Number of Terminations :
3
Time@Peak Reflow Temperature-Max (s) :
30
Rds On (Max) @ Id, Vgs :
16.5m Ω @ 28A, 10V
Factory Lead Time :
12 Weeks
Package / Case :
TO-262-3 Long Leads, I2Pak, TO-262AA
Radiation Hardening :
No
RoHS Status :
ROHS3 Compliant
Number of Elements :
1
Additional Feature :
AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Rating (Eas) :
152 mJ
Drain-source On Resistance-Max :
0.0165ohm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Through Hole
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
72nC @ 10V
Power Dissipation-Max :
3.8W Ta 107W Tc
Case Connection :
DRAIN
Terminal Position :
Single
Width :
4.826mm
Transistor Application :
SWITCHING
ECCN Code :
EAR99
Peak Reflow Temperature (Cel) :
260
Terminal Finish :
Matte Tin (Sn) - with Nickel (Ni) barrier
Turn-Off Delay Time :
52 ns
Pulsed Drain Current-Max (IDM) :
180A
Operating Mode :
ENHANCEMENT MODE
Input Capacitance (Ciss) (Max) @ Vds :
1696pF @ 25V
REACH SVHC :
No SVHC
Drain to Source Breakdown Voltage :
55V
Rise Time :
76ns
Transistor Element Material :
SILICON
Threshold Voltage :
4V
Continuous Drain Current (ID) :
53A
Length :
10.668mm
Fall Time (Typ) :
57 ns
Power Dissipation :
120W
Number of Pins :
3
Gate to Source Voltage (Vgs) :
20V
Datasheets
IRFZ46NLPBF
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRFZ46NLPBF from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Number of Terminations:3, Package / Case:TO-262-3 Long Leads, I2Pak, TO-262AA, Mounting Type:Through Hole, Number of Pins:3, IRFZ46NLPBF pinout, IRFZ46NLPBF datasheet PDF, IRFZ46NLPBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRFZ46NLPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRFZ46NLPBF


N-Channel Tube 16.5m Ω @ 28A, 10V ±20V 1696pF @ 25V 72nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA

IRFZ46NLPBF Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 152 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1696pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 53A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 55V, and this device has a drainage-to-source breakdown voltage of 55VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 52 ns.Peak drain current is 180A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 4V, which means that it will not activate any of its functions when its threshold voltage reaches 4V.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IRFZ46NLPBF Features


the avalanche energy rating (Eas) is 152 mJ
a continuous drain current (ID) of 53A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 52 ns
based on its rated peak drain current 180A.
a threshold voltage of 4V


IRFZ46NLPBF Applications


There are a lot of Infineon Technologies
IRFZ46NLPBF applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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