IRFZ46NL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

JESD-30 Code :

R-PSIP-T3

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

53A Tc

Input Capacitance (Ciss) (Max) @ Vds :

1696pF @ 25V

HTS Code :

8541.29.00.95

DS Breakdown Voltage-Min :

55V

Drain Current-Max (Abs) (ID) :

39A

Terminal Finish :

Tin/Lead (Sn/Pb)

Power Dissipation-Max :

3.8W Ta 107W Tc

Series :

HEXFET®

Peak Reflow Temperature (Cel) :

225

Drain to Source Voltage (Vdss) :

55V

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Vgs (Max) :

±20V

JESD-609 Code :

e0

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

Non-RoHS Compliant

Drain-source On Resistance-Max :

0.0165ohm

ECCN Code :

EAR99

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

16.5m Ω @ 28A, 10V

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

152 mJ

Gate Charge (Qg) (Max) @ Vgs :

72nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

30

Pulsed Drain Current-Max (IDM) :

180A

Vgs(th) (Max) @ Id :

4V @ 250µA

Surface Mount :

No

Mounting Type :

Through Hole

Number of Elements :

1

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Published :

2004

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel