IRFZ44ZSTRRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

13.9mOhm

Factory Lead Time :

12 Weeks

Case Connection :

DRAIN

Number of Terminations :

2

Gate to Source Voltage (Vgs) :

20V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G2

Operating Temperature :

-55°C~175°C TJ

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

30

Series :

HEXFET®

Packaging :

Tape and Reel (TR)

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

13.9m Ω @ 31A, 10V

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Radiation Hardening :

No

Height :

4.826mm

Peak Reflow Temperature (Cel) :

260

Width :

9.65mm

Pulsed Drain Current-Max (IDM) :

200A

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Drain to Source Breakdown Voltage :

55V

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Number of Elements :

1

Avalanche Energy Rating (Eas) :

86 mJ

Rise Time :

68ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

51A Tc

Power Dissipation-Max :

80W Tc

Published :

1999

FET Type :

N-Channel

Fall Time (Typ) :

41 ns

JESD-609 Code :

e3

Mount :

Surface Mount

Power Dissipation :

80W

Number of Pins :

3

Turn On Delay Time :

14 ns

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1420pF @ 25V

Continuous Drain Current (ID) :

51A

Turn-Off Delay Time :

33 ns