IRFZ44ZS

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.0139Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

86 mJ

Power Dissipation-Max :

80W Tc

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Rds On (Max) @ Id, Vgs :

13.9m Ω @ 31A, 10V

Series :

HEXFET®

JESD-30 Code :

R-PSSO-G2

Drain Current-Max (Abs) (ID) :

51A

Packaging :

Tube

Published :

2000

Surface Mount :

yes

Current - Continuous Drain (Id) @ 25°C :

51A Tc

Drain to Source Voltage (Vdss) :

55V

DS Breakdown Voltage-Min :

55V

Pulsed Drain Current-Max (IDM) :

200A

Vgs (Max) :

±20V

Number of Elements :

1

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Input Capacitance (Ciss) (Max) @ Vds :

1420pF @ 25V

FET Type :

N-Channel

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

Non-RoHS Compliant

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Number of Terminations :

2

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)