IRFZ44ZPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-220-3

Height :

9.65mm

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

4V @ 250µA

Element Configuration :

Single

Published :

1999

Packaging :

Tube

Threshold Voltage :

4V

Rise Time :

68ns

Width :

4.826mm

FET Type :

N-Channel

Fall Time (Typ) :

41 ns

Turn-Off Delay Time :

33 ns

Avalanche Energy Rating (Eas) :

86 mJ

JEDEC-95 Code :

TO-220AB

Dual Supply Voltage :

55V

Power Dissipation-Max :

80W Tc

Power Dissipation :

80W

Operating Mode :

ENHANCEMENT MODE

Nominal Vgs :

4 V

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

51A

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

HEXFET®

Input Capacitance (Ciss) (Max) @ Vds :

1420pF @ 25V

Vgs (Max) :

±20V

Recovery Time :

35 ns

Factory Lead Time :

12 Weeks

Pulsed Drain Current-Max (IDM) :

200A

Lead Free :

Lead Free

Number of Elements :

1

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

55V

Turn On Delay Time :

14 ns

Resistance :

13.9Ohm

Rds On (Max) @ Id, Vgs :

13.9m Ω @ 31A, 10V

Voltage - Rated DC :

55V

Number of Terminations :

3

Mount :

Through Hole

REACH SVHC :

No SVHC

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

51A Tc

Number of Pins :

3

Current Rating :

51A

Operating Temperature :

-55°C~175°C TJ

Length :

10.668mm

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE