IRFZ44ZL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Terminal Finish :

TIN LEAD

Operating Mode :

ENHANCEMENT MODE

Series :

HEXFET®

Power Dissipation-Max :

80W Tc

Drain-source On Resistance-Max :

0.0139Ohm

ECCN Code :

EAR99

Surface Mount :

No

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2003

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

225

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4V @ 250µA

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Voltage (Vdss) :

55V

Terminal Position :

Single

RoHS Status :

Non-RoHS Compliant

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

1420pF @ 25V

JESD-30 Code :

R-PSIP-T3

JESD-609 Code :

e0

DS Breakdown Voltage-Min :

55V

Pulsed Drain Current-Max (IDM) :

200A

Number of Terminations :

3

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

51A

Current - Continuous Drain (Id) @ 25°C :

51A Tc

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

86 mJ

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Rds On (Max) @ Id, Vgs :

13.9m Ω @ 31A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE