IRFZ44VZS

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

DS Breakdown Voltage-Min :

60V

Surface Mount :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

Non-RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Single

Number of Elements :

1

Packaging :

Tube

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

12m Ω @ 34A, 10V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Input Capacitance (Ciss) (Max) @ Vds :

1690pF @ 25V

Mounting Type :

Surface Mount

FET Type :

N-Channel

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.012Ohm

JESD-30 Code :

R-PSSO-G2

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

Series :

HEXFET®

Pulsed Drain Current-Max (IDM) :

230A

Drain Current-Max (Abs) (ID) :

57A

Avalanche Energy Rating (Eas) :

73 mJ

Terminal Form :

Gull wing

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

57A Tc

Drain to Source Voltage (Vdss) :

60V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power Dissipation-Max :

92W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

2003

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING