IRFZ44VZPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Termination :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 250µA

Series :

HEXFET®

Input Capacitance (Ciss) (Max) @ Vds :

1690pF @ 25V

ECCN Code :

EAR99

Mounting Type :

Through Hole

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

14 ns

Dual Supply Voltage :

60V

FET Type :

N-Channel

JEDEC-95 Code :

TO-220AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Fall Time (Typ) :

38 ns

Published :

2003

Number of Elements :

1

Power Dissipation :

92W

Resistance :

12mOhm

Operating Temperature :

-55°C~175°C TJ

Current Rating :

57A

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Length :

10.6426mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Width :

4.82mm

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

57A

Turn-Off Delay Time :

35 ns

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

12m Ω @ 34A, 10V

Element Configuration :

Single

Number of Pins :

3

Lead Free :

Lead Free

Power Dissipation-Max :

92W Tc

Package / Case :

TO-220-3

Vgs (Max) :

±20V

Rise Time :

62ns

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

60V

Voltage - Rated DC :

60V

Factory Lead Time :

12 Weeks

Current - Continuous Drain (Id) @ 25°C :

57A Tc

Nominal Vgs :

4 V

Height :

16.51mm

Number of Terminations :

3