IRFZ44VZ

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

230A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

Mounting Type :

Through Hole

Case Connection :

DRAIN

Vgs (Max) :

±20V

Power Dissipation-Max :

92W Tc

Avalanche Energy Rating (Eas) :

110 mJ

Surface Mount :

No

Transistor Element Material :

SILICON

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

RoHS Status :

Non-RoHS Compliant

Series :

HEXFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

12m Ω @ 34A, 10V

JEDEC-95 Code :

TO-220AB

ECCN Code :

EAR99

Packaging :

Tube

DS Breakdown Voltage-Min :

60V

Drain-source On Resistance-Max :

0.012Ohm

Operating Temperature :

-55°C~175°C TJ

Published :

2003

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSFM-T3

Package / Case :

TO-220-3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

1690pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

57A Tc

Drain to Source Voltage (Vdss) :

60V

Qualification Status :

Not Qualified

Number of Terminations :

3

Drain Current-Max (Abs) (ID) :

57A