IRFZ44VPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Nominal Vgs :

4 V

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

67nC @ 10V

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Height :

8.77mm

Length :

10.668mm

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

55A Tc

Package / Case :

TO-220-3

REACH SVHC :

No SVHC

Recovery Time :

105 ns

Series :

HEXFET®

Packaging :

Tube

Case Connection :

DRAIN

Element Configuration :

Single

Dual Supply Voltage :

60V

Fall Time (Typ) :

57 ns

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Rise Time :

97ns

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

55A

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Published :

2000

Factory Lead Time :

12 Weeks

JEDEC-95 Code :

TO-220AB

Number of Terminations :

3

Transistor Element Material :

SILICON

Voltage - Rated DC :

60V

Current Rating :

55A

Input Capacitance (Ciss) (Max) @ Vds :

1812pF @ 25V

Radiation Hardening :

No

Termination :

Through Hole

Operating Temperature :

-55°C~175°C TJ

Threshold Voltage :

4V

Drain to Source Breakdown Voltage :

60V

Turn On Delay Time :

13 ns

Mount :

Through Hole

Pulsed Drain Current-Max (IDM) :

220A

Rds On (Max) @ Id, Vgs :

16.5m Ω @ 31A, 10V

Power Dissipation-Max :

115W Tc

Power Dissipation :

115W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Gate to Source Voltage (Vgs) :

20V

Width :

4.826mm

Turn-Off Delay Time :

40 ns

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

4V @ 250µA