IRFZ44NSTRRPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Avalanche Energy Rating (Eas) :

150 mJ

Pulsed Drain Current-Max (IDM) :

160A

Surface Mount :

yes

Series :

HEXFET®

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Time@Peak Reflow Temperature-Max (s) :

30

Vgs (Max) :

±20V

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

55V

Input Capacitance (Ciss) (Max) @ Vds :

1470pF @ 25V

JESD-30 Code :

R-PSSO-G2

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

49A

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

49A Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Rds On (Max) @ Id, Vgs :

17.5m Ω @ 25A, 10V

Power Dissipation-Max :

3.8W Ta 94W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

260

Drain to Source Voltage (Vdss) :

55V

Terminal Position :

Single

Drain-source On Resistance-Max :

0.0175Ohm

Number of Terminations :

2

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2001

Qualification Status :

Not Qualified

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier