IRFZ44NSTRLPBF
- Mfr.Part #
- IRFZ44NSTRLPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 49A D2PAK
- Stock
- 71,022
- In Stock :
- 71,022
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lead Free :
- Contains Lead, Lead Free
- Rise Time :
- 60ns
- ECCN Code :
- EAR99
- Input Capacitance (Ciss) (Max) @ Vds :
- 1470pF @ 25V
- Fall Time (Typ) :
- 45 ns
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Recovery Time :
- 95 ns
- Operating Temperature :
- -55°C~175°C TJ
- Power Dissipation :
- 110W
- Terminal Form :
- Gull wing
- Current Rating :
- 49A
- REACH SVHC :
- No SVHC
- Gate Charge (Qg) (Max) @ Vgs :
- 63nC @ 10V
- Mounting Type :
- Surface Mount
- Power Dissipation-Max :
- 3.8W Ta 94W Tc
- JESD-30 Code :
- R-PSSO-G2
- Continuous Drain Current (ID) :
- 49A
- Resistance :
- 17.5mOhm
- Max Junction Temperature (Tj) :
- 175°C
- Height :
- 5.084mm
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Width :
- 9.65mm
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 17.5m Ω @ 25A, 10V
- Packaging :
- Tape and Reel (TR)
- Published :
- 2000
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY
- Operating Mode :
- ENHANCEMENT MODE
- Gate to Source Voltage (Vgs) :
- 20V
- Turn On Delay Time :
- 12 ns
- Termination :
- SMD/SMT
- Nominal Vgs :
- 4 V
- Dual Supply Voltage :
- 55V
- Peak Reflow Temperature (Cel) :
- 260
- Number of Elements :
- 1
- Vgs (Max) :
- ±20V
- Case Connection :
- DRAIN
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Voltage - Rated DC :
- 55V
- Drain to Source Breakdown Voltage :
- 55V
- Number of Pins :
- 3
- Turn-Off Delay Time :
- 44 ns
- Number of Terminations :
- 2
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Threshold Voltage :
- 2V
- Contact Plating :
- Tin
- JESD-609 Code :
- e3
- Length :
- 10.668mm
- Series :
- HEXFET®
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 12 Weeks
- Number of Channels :
- 1
- Transistor Application :
- SWITCHING
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 49A Tc
- Radiation Hardening :
- No
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Datasheets
- IRFZ44NSTRLPBF

N-Channel Tape & Reel (TR) 17.5m Ω @ 25A, 10V ±20V 1470pF @ 25V 63nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFZ44NSTRLPBF Description
IRFZ44NSTRLPBF is a kind of power MOSFET that is designed based on advanced processing techniques for the purpose of making extremely low on-resistance per silicon area possible. Moreover, IRFZ44NSTRLPBF is designed with the characteristics that HEXFET? power MOSFETs provide, including fast switching speed and ruggedized device design. All of these make the device more efficient and reliable for use in a wide range of applications.
IRFZ44NSTRLPBF Features
-
Thermal resistance
-
Power dissipation
-
Fast switching speed
-
Ruggedized device design
-
Available in the D2Pak/TO-262 package
IRFZ44NSTRLPBF Applications
-
System/load switch
-
Charge and discharge switch for battery applications
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