IRFZ44NPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

12 ns

Contact Plating :

Tin

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

10.668mm

Operating Mode :

ENHANCEMENT MODE

Resistance :

17.5mOhm

Series :

HEXFET®

Input Capacitance (Ciss) (Max) @ Vds :

1470pF @ 25V

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

45 ns

Package / Case :

TO-220-3

JESD-609 Code :

e3

Lead Free :

Lead Free

Current Rating :

49A

Element Configuration :

Single

Vgs(th) (Max) @ Id :

4V @ 250µA

ECCN Code :

EAR99

Turn-Off Delay Time :

44 ns

Voltage - Rated DC :

55V

Threshold Voltage :

2.1V

Current - Continuous Drain (Id) @ 25°C :

49A Tc

Rds On (Max) @ Id, Vgs :

17.5m Ω @ 25A, 10V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Packaging :

Tube

JEDEC-95 Code :

TO-220AB

Mount :

Through Hole

Dual Supply Voltage :

55V

Continuous Drain Current (ID) :

49A

Transistor Element Material :

SILICON

Factory Lead Time :

12 Weeks

Time@Peak Reflow Temperature-Max (s) :

30

Power Dissipation :

83W

Case Connection :

DRAIN

Published :

2001

Nominal Vgs :

2.1 V

Termination :

Through Hole

Width :

4.826mm

Rise Time :

60ns

Power Dissipation-Max :

94W Tc

Height :

8.77mm

Drain to Source Breakdown Voltage :

55V

FET Type :

N-Channel

Lead Pitch :

2.54mm

Number of Elements :

1

Radiation Hardening :

No

Mounting Type :

Through Hole

Number of Pins :

3

Recovery Time :

95 ns

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

250

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V