IRFZ44NL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

3.8W Ta 94W Tc

Drain-source On Resistance-Max :

0.0175Ohm

Input Capacitance (Ciss) (Max) @ Vds :

1470pF @ 25V

Series :

HEXFET®

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V

Pulsed Drain Current-Max (IDM) :

160A

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

49A Tc

Avalanche Energy Rating (Eas) :

150 mJ

Vgs(th) (Max) @ Id :

4V @ 250µA

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

55V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

JESD-30 Code :

R-PSIP-T3

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

Drain Current-Max (Abs) (ID) :

49A

Mounting Type :

Through Hole

RoHS Status :

Non-RoHS Compliant

Transistor Application :

SWITCHING

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Rds On (Max) @ Id, Vgs :

17.5m Ω @ 25A, 10V

Published :

2001

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

55V

Number of Elements :

1

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

No